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RB225T100
Diodes
Schottky barrier diode
RB225T100
Applications Switching power supply External dimensions (Unit : mm)
4.50.3 0.1
Structure
8.00.2 12.00.2
1.2
1.3 0.8 (1) (2) (3)
13.5MIN
Construction Silicon epitaxial planar
5.00.2
0.70.1 0.05
8.0
Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
10.00.3 0.1
2.80.2 0.1
15.00.4 0.2
2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 100 100 30 100 150 -40 to +150
Unit V V A A
(*1)Tc=100max Rating of per diode : Io/2
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Thermal impedance
Symbol VF IR jc
Min. -
Typ. -
Max. 0.86 400 1.75
Unit V A /W
Conditions IF=15A VR=100V junction to case
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RB225T100
Diodes
Electrical characteristic curves
100 Ta=150 10000 1000 Ta=150 Ta=125 10000
f=1MHz f=1MHz
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
10
100 10 1 0.1 0.01 0.001 0.0001
Ta=125 1 Ta=75 0.1 Ta=-25 Ta=25
Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=75
1000
100
Ta=-25
10
0.01
0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS VF 780
1
0 10 20 30 40 50 60 70 80 90 100
0
10
20
30
REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS IR 1000 2000
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
770 760 750 AVE:752.6mV 740 730 VF DISPERSION MAP
AVE:425.2mV :1.6771mV
800 700 600 500 400 300 200 100 0 IR DISPERSION MAP AVE:478.3nA
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=25 IF=15A n=30pcs
900
Ta=25 VR=100V n=30pcs
1900
Ta=25 f=1MHz VR=0V n=10pcs
1800
1700
1600 AVE:1914.5pF 1500 Ct DISPERSION MAP Ifsm-t
300
30
1000
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
8.3m
25 20 15 10 5 AVE:24.3pF 0
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50
Ifsm Ifsm
1cyc 8.3ms
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc
100
10
AVE:237.0A 0 IFSM DISRESION MAP
1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
100 Ifsm t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Mounted on epoxy board IF=10A IM=100mA time
50 45 40 Rth(j-a) D=1/2 Sin(180)
PEAK SURGE FORWARD CURRENT:IFSM(A)
10
FORWARD POWER DISSIPATION:Pf(W)
300us 1ms
35 30 25 20 15 10 5
100
1
Rth(j-c)
DC
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 0.1 10 TIME:t(ms) Rth-t CHARACTERISTICS 1000 0 5 10 15 20 25 30 35 40 45 50 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
2/3
RB225T100
Diodes
0.1
70
70 0A 0V t D=1/2 DC T Io VR D=t/T VR=50V Tj=150 60
0A 0V t DC D=1/2 T
Io VR D=t/T VR=50V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.08
60 50 40 30 20 10 0 Sin(180)
REVERSE POWER DISSIPATION:PR (W)
50 40 30 20 10 0
0.06
D=1/2
0.04
Sin(180) DC
Sin(180)
0.02
0 0 5 10 15 20
0
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
150
0
25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
150
30
ELECTROSTATIC DISCHARGE TEST ESD(KV)
No break at 30kV 25 20 AVE:20.5kV 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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